Operating Temperature Based Vulnerabilities in ReRAM

Abstract

Resistive Random-Access Memory (ReRAM) devices have caught significant research attention as scalable non-volatile memory (NVM) technology for high-density data storage in 3-D crossbar architectures. ReRAM devices can switch with low programming voltages (<±1 V) at fast time-scales (~ 10-100 ns) that make them an attractive option for on-chip embedded memory applications or off-chip high density memory storage. Memory storage read/write schemes rely on specific timing, voltage, and sensing thresholds to change and determine the states of the devices. While several in-memory computing architectures with ReRAM have been proposed, the impact of chip operating temperatures on write and read operations of ReRAM and the impact on resistive states is not well studied. This paper reports the impact of the temperature on the ReRAM devices during the write and read operations.