Detection of bond cratering defects under aluminum wedge bond using I–V characteristics and liquid crystal thermography

C. Lau, K. Sim, C. Tso, H. Ting
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引用次数: 2

Abstract

This paper focuses on a failure analysis method on one common power IC failure encountered in the production lines. The new methodology utilizing liquid crystal thermography successfully shortens the total cycle time needed to detect the bond cratering defect and its root cause analysis. The decapsulated defective parts are subjected to suitable biasing current in liquid crystal thermography analysis to detect any hot spot emerging from the sides of the bonded aluminum wedge. This new method proves to be more effective and lower cost than the traditional decapsulation and delayering method.
利用I-V特性和液晶热成像技术检测铝楔键下的键孔缺陷
针对生产线上常见的一种电源集成电路故障,提出了一种故障分析方法。利用液晶热成像技术的新方法成功地缩短了检测键孔缺陷及其根本原因分析所需的总周期时间。在液晶热成像分析中,对解封的缺陷部件施加合适的偏置电流,以检测粘结铝楔侧面出现的任何热点。该方法比传统的脱囊脱层方法更有效,成本更低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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