Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices

Abstract

The rich and fascinating properties of two-dimensional (2D) materials have recently inspired various intriguing ideas for post-silicon nanoelectronics. One of the most far reaching of them is the possible substitution of Si with 2D materials in modern field-effect transistors (FETs). Ideally, this should suppress short-channel effects and thus extend Moore’s law below 5nm channel lengths, while maintaining and possibly even overcoming the high performance of commercial Si devices. However, despite recent progress at fabricating 2D FETs, there is still no commercially competitive transistor technology. One of the main reasons for this is the relatively poor reliability of typical 2D FET prototypes, which suffer from hysteresis and bias-temperature instabilities (BTI) of the transistor characteristics. Despite this, the attention paid to this serious problem is impermissibly low. Here we discuss the main achievements at understanding the reliability of various 2D FETs, from the first prototypes to recently reported scalable devices.