Facile Synthesis of N-doped ZnO Nanorod Arrays: Towards Enhancing the UV-sensing Performance

A. S. Ismail, M. H. Mamat, M. F. Malek, N. Azhar, N. H. Sulimai, R. A. Rani, A. Zoolfakar, M. Rusop
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Abstract

Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displayed that 1 at. % sample possessed the lowest resistance film and exhibit the highest UV sensing performance with sensitivity of 12.9.
n掺杂ZnO纳米棒阵列的简易合成:增强紫外传感性能
氮(N)掺杂氧化锌(ZnO)纳米棒阵列在不同掺杂浓度从0 at。%(未掺杂)到2 at。%采用溶胶-凝胶浸渍法制备。FESEM图像显示,随着ZnO中N浓度的增加,平均直径增大。1- v测量显示1 at。%样品具有最低的电阻膜和最高的紫外传感性能,灵敏度为12.9。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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