Copper Drifts in Porous Methylsilsesquiazane Low-k Dielectric Films

Abstract

Copper drift rates were measured in porous low-dielectric-constant methylsilsesquioxane films derived from methylsilsesquiazane (MSZ) precursor. It is found that the porous MSZ film shows a lower dielectric constant (k=1.8) and a slower drift rate than that of CVD-SiO 2 .