{"title":"Low-power injection-locked zero-IF self-oscillating mixer for self-powered millimeter-wave identification (MMID) active tag in 65-nm CMOS","authors":"Pascal Burasa, N. Constantin, K. Wu","doi":"10.1109/RFIC.2015.7337754","DOIUrl":null,"url":null,"abstract":"In this paper, a 40 GHz zero-IF self-oscillating mixer (SOM) with low-power consumption, is proposed and demonstrated for the next generation of battery-free yet active mm-wave identification (MMID) tag. It exploits the mixing property of LC cross-coupled VCO, and by injection-locking the SOM to the reader's carrier frequency, it enables a direct-conversion to the baseband. It, therefore, does not require any external LO source (self-mixing) nor RF frequency conversion into IF frequency. A chip was designed using 65-nm CMOS process, and experimental results exhibit a conversion loss of about 29 dB, with a power consumption of only 280 μW.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1004 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, a 40 GHz zero-IF self-oscillating mixer (SOM) with low-power consumption, is proposed and demonstrated for the next generation of battery-free yet active mm-wave identification (MMID) tag. It exploits the mixing property of LC cross-coupled VCO, and by injection-locking the SOM to the reader's carrier frequency, it enables a direct-conversion to the baseband. It, therefore, does not require any external LO source (self-mixing) nor RF frequency conversion into IF frequency. A chip was designed using 65-nm CMOS process, and experimental results exhibit a conversion loss of about 29 dB, with a power consumption of only 280 μW.