New intrinsic gettering process in Czochralski-silicon wafer

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981472

Y.X. Li, C. Liu, H.Y. Guo, X. Wang, M. Pan, Y. Xu, D. Yang, D. Que

引用次数: 1

Abstract

A new intrinsic gettering (IG) process was established in Czochralski-silicon (CZSi) wafer subjected to a one-step annealing sequence based on the interaction of interstitial oxygen with the defects induced by neutron irradiation. The defects in Czochralski silicon wafer can be controlled by neutron irradiation. When irradiation flux changes from 5/spl times/10/sup 17/ to 1.5/spl times/10/sup 18/ cm/sup -2/, combining with one-step high-temperature annealing procedure, the neutron irradiated wafers showed an excellent intrinsic gettering effect.

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奇克拉尔斯基硅片本征捕集新工艺

建立了一种基于间隙氧与中子辐照缺陷相互作用的一步退火法恰克拉尔斯基硅(CZSi)晶圆的本征吸光新工艺。中子辐照可以控制直拉硅片的缺陷。当辐照通量从5/spl次/10/sup 17/变为1.5/spl次/10/sup 18/ cm/sup -2/时，结合一步高温退火工艺，中子辐照晶片表现出优异的本质吸散效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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