The study of the rf field in a plasma reactor

Abstract

Capacitively coupled plasma reactors are commonly used for plasma enhanced deposition or dry etching in semiconductor applications. The rf field driven at one single-frequency source in the plasma reactor is very important for the quality of finished semiconductor products, so how to generate an uniform rf field distribution is the key technology in applications. This paper discusses two techniques to improve the uniform characteristics of rf field, one is using more rf excitation sources and the other is using shaped rf electrodes. The paper also gives some simulation results analyzed by FDTD method, which proves the effectiveness of the technology.