MTJ Magnetization Switching Mechanisms for IoT Applications

Abstract

Different magnetization mechanisms, structures, and electrical properties of MTJ-based MRAM are described in the context of IoT applications. MTJ-based MRAM provides non-volatility (high retention time), low power, and high speed. This memory has a broad variety of applications. One important example is IoT. A comparative study of the magnetization mechanisms provides insight into which MTJ structures and magnetization mechanisms best support different IoT applications.