High speed IDDQ test and its testability for process variation

M. Hashizume, H. Yotsuyanagi, M. Ichimiya, T. Tamesada, M. Takeda
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引用次数: 9

Abstract

A new high speed IDDQ test method is proposed. It is based on charge current for load capacitances of gates whose output logic values are changed from L to H by test input vector application. In this paper, the testability of the test method is examined for some process variations generated in CMOS IC production.
高速IDDQ测试及其工艺变化的可测试性
提出了一种新的高速IDDQ测试方法。它是基于门的负载电容的电荷电流,门的输出逻辑值通过测试输入矢量的应用从L变为H。本文针对CMOS集成电路生产过程中产生的一些工艺变化,对该测试方法的可测试性进行了检验。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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