New Method for Oxide Capacitance Extraction

Abstract

Based on different geometries of bipolar transistors, a new scalable method to determine the parasitic capacitances is presented. The total capacitance measured from cold S parameters could be split in an area junction capacitance, a peripheral junction capacitance and a constant oxide contribution. This method is applied to a ST state-of-art fully self aligned double poly BiCMOS technology, and results are discussed.