Intrinsic DC operation and performance potential of 50nm gate length hydrogen-terminated diamond field effect transistors

Abstract

The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs) [1]. Further exploration into the intrinsic performance limitations and device operation as gate length is reduced however is essential in unveiling the potential of this exotic material system as a viable and competitive high power and high frequency device technology.