A 65nm Reliable Near-Subthreshold Standard Cells Design Using Schmitt Trigger

Jinliang Han, Yongzhong Wen, Yuejun Zhang, Pengjun Wang, Huihong Zhang
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Abstract

The researches of Near-threshold circuits pay much attention to performance and power consumption reduction. With the reduction of power supply voltage, the performance of standard cell circuits provided by foundries is susceptible to noise and process deviations. After researching low-power technology and Schmitt Trigger, we propose a semi-stacked standard cell circuit with high robustness. In order to optimize the logic gate, reduce the leakage current and improve the switch current ratio, we add a feedback transistor at the stack node of the circuit via the hysteresis effect and feedback mechanism of Schmitt Trigger. Then, we utilize the minimum width design method to improve the switching threshold and the driving current of the transistor. Our approach achieves the design of standard cell circuit under the TSMC 65nm CMOS process. The experimental results suggest that compared with previous works, our approach has the smallest coefficient of variance and the noise margin is improved about 11.5%-15.3%.
使用Schmitt触发器设计65nm可靠的近亚阈值标准电池
近阈值电路的研究注重性能和功耗的降低。随着电源电压的降低,代工厂提供的标准电池电路的性能容易受到噪声和工艺偏差的影响。在研究了低功耗技术和施密特触发器的基础上,提出了一种具有高鲁棒性的半堆叠标准单元电路。为了优化逻辑门,减小漏电流,提高开关电流比,我们利用施密特触发器的磁滞效应和反馈机制,在电路的堆叠节点上增加了一个反馈晶体管。然后,我们利用最小宽度设计方法来提高晶体管的开关阈值和驱动电流。我们的方法在台积电65nm CMOS工艺下实现了标准单元电路的设计。实验结果表明,与前人相比,本文方法方差系数最小,噪声裕度提高了11.5% ~ 15.3%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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