Analyses of single-stage complementary self-biased CMOS differential amplifiers

V. Milovanovic, H. Zimmermann
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引用次数: 5

Abstract

This paper analyzes and compares two complementary self-biased CMOS differential amplifiers. The two amplifiers differ only in terms of the number of output nodes, namely one is single-ended, the other being fully differential. Furthermore, the amplifiers are completely self-biased embedding the negative feedback in the biasing loop which makes them highly resistant to process, supply voltage and temperature variations. Both circuits are analyzed on the basis of small signals and expressions for gain are derived. The two amplifier topologies are simulated yielding a good match between the obtained results and the theory. Finally, discussed amplifiers featuring high gain and PVT immunity are well-suitable for implementation in nanometer CMOS processes.
单级互补自偏CMOS差分放大器分析
本文分析比较了两种互补的自偏置CMOS差分放大器。两个放大器的不同之处在于输出节点的数量,即一个是单端,另一个是全差分。此外,放大器是完全自偏置的,在偏置回路中嵌入负反馈,这使得它们对工艺,电源电压和温度变化具有很高的抵抗力。在小信号的基础上对两种电路进行了分析,并推导出增益表达式。对两种放大器拓扑结构进行了仿真,得到的结果与理论吻合良好。最后,所讨论的放大器具有高增益和PVT抗扰性,非常适合在纳米CMOS工艺中实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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