Characteristics of Energy in the Coulomb Island of Single Electron Transistor

Abstract

In the age of silicon technology consumption of low power is a primary challenge due to its practical necessity. For meeting this criterion in design protocol, extensive usage of nanoelectronics devices is a rudimentary choice. The goal of this paper is to review in brief about the coulomb island of a nanoelectronic device named single electron transistor (SET). It is associated with the coulomb blockade, coulomb island, or quantum dot. Quantum mechanical effects appear due to its nano size. Coulomb island of SET depends on the number of electrons and the energy in it follows the equation of a parabola. The diameter of the coulomb island must be below 10 nm which is accurately calculated here. Charging energy and quantum kinetic energy is feasible in coulomb island. Accurate calculation of these two energies is presented here and shown with a graphical representation.