Thin films interfacial adhesion characterization by Cross-Sectional Nanoindentation: Application to pad structures

S. Gallois-Garreignot, F. Chave, J. Gonchond, B. Gautheron, V. Fiori, D. Nélias
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引用次数: 3

Abstract

The feature size reduction on IC chips following Moore's law leads to great integration challenge. Among others, the mechanical integrity of pad structures is particularly critical. However, to find suitable containment actions remain tricky, and a better knowledge and characterization of interfaces are then mandatory to face these problems. The Cross-Sectional Nanoindentation (CSN) is a novel method of mechanical characterization, developed by Sanchez et al. [1]. With such method, various interfaces can be characterized, at the micrometer level, in terms of adhesion energy. Its advantages compared to the well-known 4pt bending technique are numerous: a simple and fast sample preparation, direct observation of the crack path, etc. In this paper, the CSN technique is applied to discriminate and characterize the interfaces which compose a typical wire bond pad structure. More precisely, Inter-Metal Dielectric/Metal stacks, describing a pad level are tested by the mean of CSN. The exact failed interface is then determined by SEM views. However, in order to compare the interface to each others, the adhesion energies need to be known. Due to the plastic deformation of the metal during the test, Finite Element Method (F.E.M.) is required. A 2D axisymmetric model, described in [2], is used to reproduce the test. Each stack with their characteristics is simulated and an energetic quantity is calculated. Based on these values, the interfaces are finally ranked according to their mechanical reliability. Additional insights and novel findings from the state of the art are also discussed concerning both experimental and numerical aspects of the method. At last, the ability to discriminate pad structures straightforwardly by CSN is also studied. Crack behavior is investigated by S.E.M. views and a discussion is proposed concerning the most relevant criterion. Future developments concerning this method are finally described.
用横截面纳米压痕表征薄膜界面附着力:在衬垫结构中的应用
随着摩尔定律的发展,集成电路芯片的特征尺寸越来越小,这给集成带来了巨大的挑战。其中,垫结构的机械完整性尤为关键。然而,要找到合适的遏制动作仍然很棘手,因此必须更好地了解和描述接口,才能面对这些问题。横截面纳米压痕(CSN)是一种新的力学表征方法,由Sanchez等人[1]开发。使用这种方法,可以在微米级别上根据粘附能表征各种界面。与众所周知的4pt弯曲技术相比,它的优点很多:简单快速的样品制备,直接观察裂纹路径等。本文应用CSN技术对构成典型线键焊结构的界面进行了判别和表征。更准确地说,描述焊盘电平的金属间介电/金属堆栈通过CSN的平均值进行测试。然后通过SEM视图确定确切的失效接口。然而,为了对界面进行比较,需要知道粘附能。由于金属在试验过程中的塑性变形,需要采用有限元法。使用[2]中描述的二维轴对称模型来重现试验。对每一层的特征进行了模拟,并计算了能量值。基于这些值,最后根据界面的机械可靠性进行排序。本文还讨论了有关该方法的实验和数值方面的其他见解和新发现。最后,研究了CSN直接识别垫块结构的能力。用sem方法研究了裂纹行为,并对最相关的判据进行了讨论。最后对该方法的未来发展进行了展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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