Qingqing Lian, Ruiping Zhu, Wang Jing, Hailong Liu, Zhongwei Jiang
{"title":"The Etching Morphology of Silver Study by Inductively Coupled Ar-Based Plasmas","authors":"Qingqing Lian, Ruiping Zhu, Wang Jing, Hailong Liu, Zhongwei Jiang","doi":"10.1109/CSTIC52283.2021.9461479","DOIUrl":null,"url":null,"abstract":"The main difficulty of silver etching is that non-volatile by-products are easily generated during the etching process, these by-products cover the surface of the material or mask, which affects the etching and difficult to remove. In this paper, we have studied the influence of different gas on silver etching, and compared the morphology before and after wet stripping. In the experiment, under the condition of a larger flow rate of Ar, larger bias voltage and a small amount of CH4 were added, and the etching results were better.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"69 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The main difficulty of silver etching is that non-volatile by-products are easily generated during the etching process, these by-products cover the surface of the material or mask, which affects the etching and difficult to remove. In this paper, we have studied the influence of different gas on silver etching, and compared the morphology before and after wet stripping. In the experiment, under the condition of a larger flow rate of Ar, larger bias voltage and a small amount of CH4 were added, and the etching results were better.