RF small signal modeling of tri-gate /spl Omega/ MOSFETs implemented on bulk Si wafers

Abstract

The RF characteristics of the tri-gate /spl Omega/ MOSFETs were studied firstly by using 3-dimensional device simulator. Small signal model parameters were extracted using an equivalent circuit and compared with those of a planar MOSFET. The /spl Omega/ MOSFET shows lower sensitivity of g/sub mb/ and V/sub T/ with substrate bias than the planar device. The tri-gale /spl Omega/ MOSFETs shows a higher cut-off frequency at a lower drain current.