E. B. Ortega-Rosales, F. Sandoval-Ibarra, E. Becerra-Alvarez
{"title":"A silicon-based 2.4GHz fully-differential LC-VCO: A design methodology proposal","authors":"E. B. Ortega-Rosales, F. Sandoval-Ibarra, E. Becerra-Alvarez","doi":"10.1109/SMACD.2015.7301688","DOIUrl":null,"url":null,"abstract":"This paper presents a methodology to design voltage controlled oscillators. The usefulness of the design proposal is shown by designing a LC oscillator in a 130nm CMOS technology, intended for Bluetooth/Zigbee applications. From simulations results, when temperature varies from 0 to 100°C, power consumption ranging from 3.1mW to 3.81mW is achieved. At 3.4mW of power consumption, a phase noise of -119 dBc/Hz was obtained. In this proposal, NMOS varactors achieve a tuning range of 150MHz.","PeriodicalId":207878,"journal":{"name":"2015 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMACD.2015.7301688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a methodology to design voltage controlled oscillators. The usefulness of the design proposal is shown by designing a LC oscillator in a 130nm CMOS technology, intended for Bluetooth/Zigbee applications. From simulations results, when temperature varies from 0 to 100°C, power consumption ranging from 3.1mW to 3.81mW is achieved. At 3.4mW of power consumption, a phase noise of -119 dBc/Hz was obtained. In this proposal, NMOS varactors achieve a tuning range of 150MHz.