Packaging With Multichip Modules

H. Charles
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引用次数: 5

Abstract

Packaging with multichip modules is rapidly becoming a major thrust in electronic system technology. Multichip modules combine several high-performance silicon or GaAs integrated circuits with a customdesigned multilayer substrate structure which takes full advantage of the integrated circuits' performance (e.g., 100-MHz digital clocks, multi-GHz analog frequencies). These complex "hybrid" structures can be fabricated on various substrate materials using several different dielectridmetallization schemes. Because of the high density and high performance of the electronic devices packaged in multichip modules, stringent new demands are being placed on materials, interconnects, and packaging structures. A systematic review of multichip module structures and materials is presented. Module electronic and physical properties are described along with the potential impact of new materials on module performance.
封装多芯片模块
多芯片模块封装正迅速成为电子系统技术的主要推动力。多芯片模块将多个高性能硅或GaAs集成电路与定制设计的多层衬底结构结合在一起,充分利用集成电路的性能(例如100 mhz数字时钟,多ghz模拟频率)。这些复杂的“杂化”结构可以使用几种不同的介电金属化方案在各种衬底材料上制造。由于封装在多芯片模块中的电子器件的高密度和高性能,对材料、互连和封装结构提出了严格的新要求。系统地回顾了多芯片模块的结构和材料。描述了模块的电子和物理特性以及新材料对模块性能的潜在影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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