Effect of germane in gas phase on electronic properties of GeXSiY:H alloys deposited by RF plasma discharge

2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2016-09-01 DOI:10.1109/ICEEE.2016.7751215

S. Zarate, I. Cosme, A. Kosarev, S. Mansurova, A. Itzmoyotl, H. E. Martinez-Mateo

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Abstract

We have studied the effect of Ge-concentration in gas phase on electronic properties of GeXSiY:H alloys deposited by RF-PECVD. The relative gas phase Ge concentration was varied from [Ge]_gas= 50 % to 100 %. The electronic properties of the films were studied by the measurements of temperature dependence of dark conductivity σ_dark (T) in the range of T= 300 to 430 K. The temperature dependence curves were described by the thermal activated conduction model and activation energy and Fermi level parameters were calculated. A change in dark conductivity was found from 1.7×10^-6 Ω^-1cm^-1 at [Ge]_gas= 50 % to 1.1×10^-4 Ω^-1cm^-1 at [Ge]_gas =100 %. The correlation between Ge in gas phase and conductivity was reflected in activation energy and Fermi level values that varied from E_a= 0.37 to 0.23 eV and E_F=0.27 to 0.10 eV, respectively.

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气相锗对射频等离子体放电沉积GeXSiY:H合金电子性能的影响

研究了气相ge浓度对RF-PECVD沉积geexsiy:H合金电子性能的影响。气相Ge的相对浓度从[Ge]气= 50%到100%不等。在T= 300 ~ 430 K范围内，通过测量暗导率σdark (T)与温度的关系，研究了薄膜的电子性能。用热激活传导模型描述了温度依赖曲线，并计算了活化能和费米能级参数。从[Ge]气体= 50%的1.7×10-6 Ω-1cm-1到[Ge]气体= 100%的1.1×10-4 Ω-1cm-1，暗电导率发生了变化。气相Ge与电导率的相关性体现在活化能和费米能级上，分别为Ea= 0.37 ~ 0.23 eV和EF=0.27 ~ 0.10 eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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