PLEDs for Integration with MOS Circuits

Abstract

A new promising way for the monolithic integration of light emitting devices on the top of MOS circuits is discribed. The active layer consists of PPV or MeLPPP light emitting polymer material (LEP) with an ITO cathode and a metallic anode. All process steps, including the possibility of dry etching of the active layer and structuration of the upper electrode, are typical for MOS-technology. Currentvoltage and current-intensity measurements of the devices are done for characterisation. These polymeric light emitting diodes (PLED) allow the monolithic integration of MOS microelectronic circuits and light emitting devices on a silicon chip forming one