1.2 kV SiC MOSFET Body Diode Turn-Off in Fast Switching: Channel Conduction, Carrier Plasma and Parasitic Turn-On

Abstract

The paper extends the investigation of the body diode (BD) turn-off process for 1.2 kV SiC MOSFETs [1]. Here, we investigate the devices under high current density (J=675 A/cm2), fast switching (turn-on di/dt up to 6 A/ns) and high temperature conditions (T=175°C). The different aspects of body diode (BD) channel conduction, on-state carrier plasma and parasitic turn-on (PTO) are analysed in detail.