High accuracy large-signal SPICE model for silicon carbide MOSFET

Abstract

This paper provides a method to match characteristics of SiC MOSFET by a simple SPICE model. Besides, this method not only reaches highly approximate results in an accuracy of characteristics compared to commercial SiC SPICE model but also reduces lots of quantities of parameters from modified BSIM model. This method expresses the 1st quadrant ID-VDS and ID-VGS curve well by some additional modified equations. Also, the model development of the 3rd quadrant characteristics, which combines a diode with a JFET model, obtains a good fitting result. Finally, compared to conventional models, the R-square value and normalized RMSD value are significantly improved.