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High hole mobilities in fullly-strained Si/Si(1-x)Ge(x) (0.3 < x < 0.4) layers and their significance for SiGe pMOSFET performance

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194746
R. Lander, Y. Ponomarev, W.B. de Boer
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全应变Si/Si(1-x)Ge(x) (0.3 <)中高空穴迁移率;x & lt;0.4)层及其对SiGe pMOSFET性能的意义
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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30th European Solid-State Device Research Conference
30th European Solid-State Device Research Conference
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