{"title":"An analog receiver front-end for capacitive body-coupled communication","authors":"P. Harikumar, Muhammad Irfan Kazim, J. Wikner","doi":"10.1109/NORCHP.2012.6403137","DOIUrl":null,"url":null,"abstract":"This paper presents an analog receiver front-end design (AFE) for capacitive body-coupled digital baseband receiver. The most important theoretical aspects of human body electrical model in the perspective of capacitive body-coupled communication (BCC) have also been discussed and the constraints imposed by gain and input-referred noise on the receiver front-end are derived from digital communication theory. Three different AFE topologies have been designed in ST 40-nm CMOS technology node which is selected to enable easy integration in today's system-on-chip environments. Simulation results show that the best AFE topology consisting of a multi-stage AC-coupled preamplifier followed by a Schmitt trigger achieves 57.6 dB gain with an input referred noise PSD of 4.4 nV/√Hz at 6.8 mW.","PeriodicalId":332731,"journal":{"name":"NORCHIP 2012","volume":"304 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NORCHIP 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2012.6403137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
This paper presents an analog receiver front-end design (AFE) for capacitive body-coupled digital baseband receiver. The most important theoretical aspects of human body electrical model in the perspective of capacitive body-coupled communication (BCC) have also been discussed and the constraints imposed by gain and input-referred noise on the receiver front-end are derived from digital communication theory. Three different AFE topologies have been designed in ST 40-nm CMOS technology node which is selected to enable easy integration in today's system-on-chip environments. Simulation results show that the best AFE topology consisting of a multi-stage AC-coupled preamplifier followed by a Schmitt trigger achieves 57.6 dB gain with an input referred noise PSD of 4.4 nV/√Hz at 6.8 mW.