TCAD Based Optimization of SJ Infrared Solar Cell for an Efficient Thermo-Photovoltaic Application

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI:10.1109/VLSIDCS47293.2020.9179849

Dickson Warepam, K. Phimu, Khomdram Jolson Singh, Rudra Sankar Dhar

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Abstract

A thermophotovoltaic (TPV) cells directly convert infrared (IR) radiation to electricity, similar to when traditional solar cells are exposed to visible light. A reliable high efficient Single junction Infrared cell for thermo-photovoltaic application was modeled by using numerical simulation TCAD tool ATLAS. The most potential materials GaSb, InGaAs and InGaSb and their respective Infrared cell were compared and analyzed their various critical performance parameters. GaSb based TPV cells is found to be the best choice among them. The cell optimization is done for operation with terrestrial solar spectrum AM1.5. The optimized Single Junction Infrared TPV cell is allowed for further increasing the efficiency up to 27.31% at black body spectrum (TBB =1300K). Optimization of doping concentration and layer thickness of GaSb cell with respect to Power conversion efficiency (PCE) and External Quantum Efficiency (EQE) is performed by simple successive iteration algorithm. Further, efficiencies at varied temperature range (1100K to 2000K) is also investigated for future infrared application. It is found that up to 32% efficiency at AM1.5 and 35% efficiency can be attained at 1800K radiation in this proposed optimized cell.

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基于TCAD的SJ红外太阳能电池高效热光伏优化设计

热光伏(TPV)电池直接将红外(IR)辐射转化为电能，类似于传统的太阳能电池暴露在可见光下。利用TCAD数值模拟工具ATLAS对一种可靠、高效的热光伏单结红外电池进行了建模。比较分析了最具潜力的三种材料GaSb、InGaAs和InGaSb及其红外电池的各项关键性能参数。其中，基于GaSb的TPV电池是最佳选择。在地面太阳光谱AM1.5条件下对电池进行了优化。优化后的单结红外TPV电池在黑体光谱(TBB =1300K)下的效率可进一步提高27.31%。采用简单的逐次迭代算法优化掺杂浓度和层厚对电池功率转换效率(PCE)和外量子效率(EQE)的影响。此外，还研究了不同温度范围(1100K至2000K)下的效率，以用于未来的红外应用。结果表明，该电池在AM1.5和1800K辐射下的效率分别可达32%和35%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)

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