A wideband fully integrated 0.25/spl mu/m BiCMOS 5GHz medium power amplifier

Abstract

A wideband 4.2GHz-5.6GHz balanced Medium Power Amplifier has been designed in a 0.2Spm SiGe:C bipolar process. The two stage amplifier is housed in a VFQF’F”20 package with integrated inputloutput matcbing networks and onboard printed rat-race balnns. A saturated output power of 16dBm has been measured with a small signal gain of IS.2dB at SGHz with a total current consumption of llOmA from a 2.4V supply voltage at ambient temperature. The measured 3dB bandwidth is IIGHz, the best value ever reported in literature for a fully integrated medium PA housed in a standard padage for mass production witb DO external components required for inputloutput matching. The die size is 1.4~1.750 m d .