CONTROL OF INCIPIENCE HYSTERESIS EFFECTS IN LIQUID COOLED ELECTRONICS HEAT SINKS

S. Bhavnani, S. E. Balch, R. Jaeger
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引用次数: 10

Abstract

Although air cooling continues to be the primary cooling technique for electronics, increases in chip density and power dissipation drive the need to study techniques such as liquid immersion cooling. This paper describes a saturated pool boiling study of interactions between different heat sources, located in close proximity so as to simulate neighboring ICs on a vertically oriented silicon multichip module, immersed in FC-72. The heat sinks tested consisted of re-entrant cavities etched in silicon to enhance thermal performance, while the heat sources were in the form of serpentine thin film heaters. The benchmark case to which all multiple heater tests were compared was the isolated central heater case with no heat dissipating neighbors. With just this heat source activated, the usual boiling incipience temperature hysteresis was experienced during the first increasing heat cycle. During the second cycle of increasing heat flux, this hysteresis all but disappeared, proving the efficacy of re-entrant cavities in trapping vapor, as long as the pool remained saturated. The presence of a neighboring heat source located below the test heater, dramatically improves the thermal performance, virtually eliminating hysteresis effects altogether.
液冷电子散热器初期迟滞效应的控制
虽然空气冷却仍然是电子产品的主要冷却技术,但芯片密度和功耗的增加推动了对液体浸没冷却等技术的研究。本文描述了一个饱和池沸腾研究不同热源之间的相互作用,位于近距离,以模拟相邻的集成电路在垂直定向硅多芯片模块,浸入FC-72。测试的散热器由硅蚀刻的可入腔组成,以增强热性能,而热源则采用蛇形薄膜加热器的形式。所有多个加热器测试比较的基准情况是没有散热邻居的孤立中央加热器情况。当该热源被激活时,在第一次升温循环中出现了通常的沸腾起始温度滞后现象。在热通量增加的第二个循环中,这种迟滞几乎完全消失,证明了只要池保持饱和,再入腔在捕获蒸汽方面的有效性。位于测试加热器下方的邻近热源的存在,极大地提高了热性能,几乎完全消除了滞后效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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