Analysis of avalanche breakdown in PN structures

S. Amon, D. Krizzaj, S. Sokolic
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Abstract

The influence of several impact ionization parameters is studied. Reverse breakdown characteristics for different step junction PN structures are calculated. A correspondence of calculated results with standard results found in the literature is reasonable for low and very high doping concentrations, while poor for the 5*10/sup 10/+5*10/sup 19/ cm/sup -3/ region. For this region, corrected values of critical fields leading to proper breakdown voltages are determined and reported.<>
PN结构雪崩击穿分析
研究了几种冲击电离参数的影响。计算了不同阶跃结PN结构的反击穿特性。对于低掺杂浓度和极高掺杂浓度,计算结果与文献中发现的标准结果的对应是合理的,而对于5*10/sup 10/+5*10/sup 19/ cm/sup -3/区域,计算结果与标准结果的对应较差。对于该区域,确定并报告了导致适当击穿电压的关键场的修正值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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