Vertical tunnel field-effect transistor with bandgap modulation and workfunction engineering

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356534

K. Bhuwalka, J. Schulze, I. Eisele

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引用次数: 16

Abstract

A MBE grown vertical tunnel FET, based on band-to-band tunneling, has already been proposed. Based on Si, it showed some remarkable properties. However, it failed to meet the technology requirements in terms of on-current and threshold voltage. Improvement in the n-channel device performance by bandgap modulation at the tunneling junction using a thin /spl delta/p/sup +/ SiGe layer has been shown. However, as the germanium mole fraction is increased in SiGe, even though the on-current threshold voltage and sub-threshold swing, S, all show improved behavior, the leakage current is seen to increase significantly as tunneling probability becomes significant even at zero gate bias. In this work, we further present the improvement in the device performance using gate workfunction engineering along with bandgap modulation at the tunnel junction. As bandgap modulation leads to improved S and can be scaled to below 60 mV/dec independent of temperature we show, by means of 2D computer simulations, that it is possible to achieve very low off-currents and very high on-currents for the tunnel FET.

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带隙调制垂直隧道场效应晶体管及工作函数工程

已经提出了一种基于带对带隧道效应的MBE生长垂直隧道场效应管。以硅为基材，它显示出一些显著的性质。但是在导通电流和阈值电压方面都不能满足技术要求。通过在隧道结处使用薄/spl delta/p/sup +/ SiGe层进行带隙调制，可以改善n通道器件的性能。然而，随着锗在SiGe中的摩尔分数的增加，尽管导通电流阈值电压和亚阈值摆幅S都表现出改善的行为，但漏电流明显增加，即使在零栅极偏置下，隧穿概率也变得显著。在这项工作中，我们进一步提出了使用门工作函数工程和隧道结带隙调制来改善器件性能的方法。由于带隙调制可以改善S，并且可以与温度无关地缩小到60 mV/dec以下，我们通过二维计算机模拟表明，隧道场效应管可以实现非常低的关断电流和非常高的通断电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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