Comprehensive device reliability and oxide traps distribution analysis by the low frequency noise in ultra-thin body SOI (UTBSOI) MOSFETs

Abstract

This study investigates the device characteristics of the ultra-thin body (UTB) SOI MOSFETs with different channel lengths. The device reliability, body charging effect, and oxide trap distribution are also studied. The P-type device reveals more degradation of the threshold voltage than that of N-type device as decreasing the channel length. For the effect of body charging on ultra-thin Si-body, the N-type device appears more serious body-charging effect than that of the P-type device. Additionally, the N-type body-tied UTB SOI MOSFETs w/ and w/o body grounded shows the bulk oxide trap (NBOT) at the SiO2/Si interface is larger than that at poly-Si-gate/SiO2 interface. Additionally, the N-type device reveals the correlated-carrier number mobility fluctuation. For P-type device, the similar carrier-fluctuation appears in the HCI test, but the BTI stress enhances the phenomenon of the carrier-number fluctuation.