Are NV-memories non-volatile?

Records of the 1993 IEEE International Workshop on Memory Testing Pub Date : 1993-08-09 DOI:10.1109/MT.1993.263141

D. Ratchev

引用次数: 2

Abstract

Some results from qualification test procedures on 64 k (4 designs) and 256 k (4 designs) EEPROM as well as 1 M (4 designs) flash memories are presented. Electrical characterization, various environmental tests, and reliability tests on up to about 220 devices per design were performed. Different defect and failed devices were detected and failure analysis (whenever possible) was accomplished. The results indicate enhancements of the quality and reliability of newer NV-memory generations but the levels of other standard memories (DRAM, SRAM) are not reached yet.<>

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nv存储器是非易失性的吗?

介绍了对64k(4种设计)和256k(4种设计)EEPROM以及1m(4种设计)闪存进行鉴定测试的一些结果。电气特性、各种环境测试和可靠性测试对每个设计多达220个设备进行了测试。检测不同的缺陷和失效设备，并完成失效分析(只要可能)。结果表明，新一代nv存储器的质量和可靠性有所提高，但尚未达到其他标准存储器(DRAM, SRAM)的水平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Records of the 1993 IEEE International Workshop on Memory Testing

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