Improved on-chip components for integrated DC-DC converters in 0.13 µm CMOS

Jinhua Ni, Zhiliang Hong, B. Liu
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引用次数: 29

Abstract

A fully-integrated DC-DC converter with on-chip inductors and capacitors is realized in a 0.13 µm CMOS technology. By using an asymmetric, high-Q inductor, power efficiency comparable to that of converters implemented with off-chip inductors is achieved. Straightforward analysis of high-density capacitor structure results in minimal ESR and optimal filtering of the output. The manufactured converter achieves a peak power efficiency of 80.5 % for an optimal load current of 170 mA and a voltage conversion ratio of 0.76 when switching at 180 MHz. This design is approximately 23 % more efficient than a linear regulator at a voltage conversion ratio of 0.55. A simple voltage mode PWM control keeps the output stable at the desired level, under load conditions from 0 mW to 720 mW.
改进的片上元件,用于0.13µm CMOS集成DC-DC转换器
采用0.13µm CMOS技术实现了具有片上电感和电容器的完全集成的DC-DC转换器。通过使用非对称的高q电感器,可以实现与片外电感器实现的转换器相当的功率效率。对高密度电容结构进行简单的分析,可以实现最小的ESR和最佳的输出滤波。该变换器在最佳负载电流为170 mA时的峰值功率效率为80.5%,开关频率为180 MHz时的电压转换比为0.76。在电压转换比为0.55时,该设计比线性稳压器效率高约23%。在0 mW到720 mW的负载条件下,简单的电压模式PWM控制使输出稳定在所需的水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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