Stability of Hybrid SET-CMOS Based NOT Gate

Arpita Ghosh
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引用次数: 1

Abstract

This work demonstrates the stability analysis of SET-CMOS based hybrid NOT gate. Under different temperature condition the stability of the circuit is checked using one of the popular software SIMON, dedicated for the Single electron Device simulation. For the straightforward stability simulation of the circuit in SIMON simulator the circuit has been modified by replacing the MOS with an equivalent resistance as SIMON does not support the co-simulation of SET and MOSFET. Simulation results of the logic operation and stability analysis are furnished in support.
基于SET-CMOS的混合非门稳定性研究
本工作演示了基于SET-CMOS的混合非门的稳定性分析。在不同的温度条件下,使用流行的单电子器件仿真软件SIMON来检查电路的稳定性。由于SIMON不支持SET和MOSFET的联合仿真,为了在SIMON模拟器中直接进行电路的稳定性仿真,将MOS替换为等效电阻对电路进行了修改。给出了逻辑运算的仿真结果和稳定性分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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