Impact of DVS on Power Consumption and SEE Sensitivity of COTS Volatile SRAMs

Abstract

An experimental study on the SEU sensitivity of 65-nm, 90-nm, and 130-nm volatile bulk COTS SRAMs against thermal neutron irradiation while applying Dynamic Voltage Scaling (DVS) is presented. Results show a linear relation between the SEU cross-sections and Icc of the DUTs. Moreover, it is demonstrated that, even tough applying DVS increases the SEU cross-section, taking the power consumption into account, this approach is beneficial.