SAR ADC Architecture with Fully Passive Noise Shaping

Dmitry Osipov, A. Gusev, V. Shumikhin, S. Paul
{"title":"SAR ADC Architecture with Fully Passive Noise Shaping","authors":"Dmitry Osipov, A. Gusev, V. Shumikhin, S. Paul","doi":"10.1109/MIEL.2019.8889572","DOIUrl":null,"url":null,"abstract":"A new fully passive noise-shaping architecture for successive approximation register (SAR) analog-to-digital converters (ADCs) was proposed. A first-order noise transfer function (NTF) with zero located nearly at one can be achieved. The additional pole increases the efficiency of noise shaping to further 3 dB. So, the use of higher over sampling ratios (OSR) and increased effective number of bits (ENOB) is possible. The architecture was applied to the design of a 9.8-bit ENOB SAR ADC in a 65 nm complementary metal-oxide semiconductor (CMOS) of United Microelectronics Corporation (UMC) with OSR equal to 10. A 6-bit capacitive DAC was used. The proposed architecture provides 3.8 additional bits in ENOB. The equalent input bandwitdth is equal to 200 kHz with the sampling rate equal to 4 MS/s.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"304 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889572","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A new fully passive noise-shaping architecture for successive approximation register (SAR) analog-to-digital converters (ADCs) was proposed. A first-order noise transfer function (NTF) with zero located nearly at one can be achieved. The additional pole increases the efficiency of noise shaping to further 3 dB. So, the use of higher over sampling ratios (OSR) and increased effective number of bits (ENOB) is possible. The architecture was applied to the design of a 9.8-bit ENOB SAR ADC in a 65 nm complementary metal-oxide semiconductor (CMOS) of United Microelectronics Corporation (UMC) with OSR equal to 10. A 6-bit capacitive DAC was used. The proposed architecture provides 3.8 additional bits in ENOB. The equalent input bandwitdth is equal to 200 kHz with the sampling rate equal to 4 MS/s.
完全无源噪声整形的SAR ADC结构
提出了一种用于逐次逼近寄存器(SAR)模数转换器(adc)的全无源噪声整形结构。可以得到零接近于1的一阶噪声传递函数。额外的极将噪声整形效率提高到3 dB。因此,使用更高的过采样比(OSR)和增加的有效位数(ENOB)是可能的。该架构应用于联合微电子公司(UMC) 65 nm互补金属氧化物半导体(CMOS)的9.8位ENOB SAR ADC的设计,OSR等于10。采用6位电容式DAC。提议的体系结构在ENOB中提供了3.8个额外的位。等效输入带宽为200khz,采样率为4ms /s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信