{"title":"SAR ADC Architecture with Fully Passive Noise Shaping","authors":"Dmitry Osipov, A. Gusev, V. Shumikhin, S. Paul","doi":"10.1109/MIEL.2019.8889572","DOIUrl":null,"url":null,"abstract":"A new fully passive noise-shaping architecture for successive approximation register (SAR) analog-to-digital converters (ADCs) was proposed. A first-order noise transfer function (NTF) with zero located nearly at one can be achieved. The additional pole increases the efficiency of noise shaping to further 3 dB. So, the use of higher over sampling ratios (OSR) and increased effective number of bits (ENOB) is possible. The architecture was applied to the design of a 9.8-bit ENOB SAR ADC in a 65 nm complementary metal-oxide semiconductor (CMOS) of United Microelectronics Corporation (UMC) with OSR equal to 10. A 6-bit capacitive DAC was used. The proposed architecture provides 3.8 additional bits in ENOB. The equalent input bandwitdth is equal to 200 kHz with the sampling rate equal to 4 MS/s.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"304 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889572","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new fully passive noise-shaping architecture for successive approximation register (SAR) analog-to-digital converters (ADCs) was proposed. A first-order noise transfer function (NTF) with zero located nearly at one can be achieved. The additional pole increases the efficiency of noise shaping to further 3 dB. So, the use of higher over sampling ratios (OSR) and increased effective number of bits (ENOB) is possible. The architecture was applied to the design of a 9.8-bit ENOB SAR ADC in a 65 nm complementary metal-oxide semiconductor (CMOS) of United Microelectronics Corporation (UMC) with OSR equal to 10. A 6-bit capacitive DAC was used. The proposed architecture provides 3.8 additional bits in ENOB. The equalent input bandwitdth is equal to 200 kHz with the sampling rate equal to 4 MS/s.