Nicola Lupo, C. Calligaro, C. Wenger, F. Maloberti
{"title":"An integrated rad-hard test-vehicle for embedded emerging memories","authors":"Nicola Lupo, C. Calligaro, C. Wenger, F. Maloberti","doi":"10.1109/ICECS.2016.7841118","DOIUrl":null,"url":null,"abstract":"An integrated test vehicle architecture for resistive memories is presented. The designed structure, made by two 128kb arrays, allows a systematic characterization of the technology before, during and after the exposure to radiation. For this, after the motivation of the work, the architecture and the design solutions to achieve a high degree of tolerance to radiation effect are discussed; a radiation-hardening-by-design approach is used. A test chip, currently under fabrication, has been implemented using a 250nm CMOS technology.","PeriodicalId":205556,"journal":{"name":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2016.7841118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An integrated test vehicle architecture for resistive memories is presented. The designed structure, made by two 128kb arrays, allows a systematic characterization of the technology before, during and after the exposure to radiation. For this, after the motivation of the work, the architecture and the design solutions to achieve a high degree of tolerance to radiation effect are discussed; a radiation-hardening-by-design approach is used. A test chip, currently under fabrication, has been implemented using a 250nm CMOS technology.