An integrated rad-hard test-vehicle for embedded emerging memories

Nicola Lupo, C. Calligaro, C. Wenger, F. Maloberti
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Abstract

An integrated test vehicle architecture for resistive memories is presented. The designed structure, made by two 128kb arrays, allows a systematic characterization of the technology before, during and after the exposure to radiation. For this, after the motivation of the work, the architecture and the design solutions to achieve a high degree of tolerance to radiation effect are discussed; a radiation-hardening-by-design approach is used. A test chip, currently under fabrication, has been implemented using a 250nm CMOS technology.
嵌入式新兴存储器的集成抗辐射测试工具
提出了一种电阻式存储器集成测试车结构。设计的结构由两个128kb阵列组成,可以在暴露于辐射之前,期间和之后系统地表征该技术。为此,在工作的动机之后,对实现对辐射效应的高度耐受的建筑和设计方案进行了探讨;采用了设计辐射硬化方法。目前正在制造的测试芯片已经采用250纳米CMOS技术实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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