Magnetoelectric response analysis of the piezoelectric/piezomagnetic thin-film heterostructure derived by low energy cluster beam deposition

Shifeng Zhao, C. Yao, Meng-liang Yao, Yuewen Mu, J. Wan, Guang-hou Wang
{"title":"Magnetoelectric response analysis of the piezoelectric/piezomagnetic thin-film heterostructure derived by low energy cluster beam deposition","authors":"Shifeng Zhao, C. Yao, Meng-liang Yao, Yuewen Mu, J. Wan, Guang-hou Wang","doi":"10.1109/SPAWDA.2008.4775748","DOIUrl":null,"url":null,"abstract":"The piezoelectric/piezomagnetic thin-film heterostructure has been prepared by using low energy cluster beam to deposit Tb-Fe clusters onto the Pb(Zr0.52Ti0.48)O3 (PZT) film substrate. The magnetoelectric voltage coefficient of the heterostructure is larger than that of the reported all-oxide ferroelectric-ferromagnetic composite film. A magnetic-mechanical-electronic transformation model is designed to deeply investigate the origin of the giant magnetoelectric effect. And the coupling coefficient k between the piezoelectric and piezomagnetic phase is introduced into this model to analysis the magnetoelectric response of the heterostructure. It is found that the coupling coefficient k plays a key pole in the production of the magnetoelectric effect for piezoelectric/piezomagnetic thin-film heterostructure. This work describes an ideal way to optimize the magnetoelectric effect of the piezoelectric/piezomagnetic thin-film heterostructure and facilitates their applications in MEMS devices.","PeriodicalId":190941,"journal":{"name":"2008 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPAWDA.2008.4775748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The piezoelectric/piezomagnetic thin-film heterostructure has been prepared by using low energy cluster beam to deposit Tb-Fe clusters onto the Pb(Zr0.52Ti0.48)O3 (PZT) film substrate. The magnetoelectric voltage coefficient of the heterostructure is larger than that of the reported all-oxide ferroelectric-ferromagnetic composite film. A magnetic-mechanical-electronic transformation model is designed to deeply investigate the origin of the giant magnetoelectric effect. And the coupling coefficient k between the piezoelectric and piezomagnetic phase is introduced into this model to analysis the magnetoelectric response of the heterostructure. It is found that the coupling coefficient k plays a key pole in the production of the magnetoelectric effect for piezoelectric/piezomagnetic thin-film heterostructure. This work describes an ideal way to optimize the magnetoelectric effect of the piezoelectric/piezomagnetic thin-film heterostructure and facilitates their applications in MEMS devices.
低能簇束沉积压电/压磁薄膜异质结构的磁电响应分析
利用低能簇束在Pb(Zr0.52Ti0.48)O3 (PZT)薄膜衬底上沉积Tb-Fe簇,制备了压电/压磁薄膜异质结构。异质结构的磁电电压系数比报道的全氧化物铁电-铁磁复合膜的磁电电压系数大。为了深入研究巨磁电效应的成因,建立了磁-机-电转换模型。将压电相与压磁相的耦合系数k引入该模型,分析异质结构的磁电响应。研究发现,耦合系数k对压电/压磁薄膜异质结构的磁电效应的产生起关键作用。本工作描述了一种优化压电/压磁薄膜异质结构磁电效应的理想方法,促进了其在MEMS器件中的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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