High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839674

Y. F. Chang, L. Ji, Y. Chen, F. Zhou, T. Tsai, K. Chang, M. Chen, T. Chang, B. Fowler, E. Yu, J. Lee

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引用次数: 2

Abstract

A highly compact, one diode - one resistor (1D-1R) nano-pillar device architecture has been demonstrated using nano-sphere lithography (NSL) to fabricate SiOx-based resistive switching (RS) memory. The intrinsic SiOx-based resistive switching element and Si-based PN diode are self-aligned on the epitaxial silicon wafer using NSL and a deep-Si-etch process without using conventional photolithography. The DC electrical performance, an AC pulse response in the 50 ns regime, capability for multi-bit operation, and high readout margin immunity for sneak path issue demonstrate good potential for high-speed nonvolatile memory (NVM). The NSL fabrication process is an efficient, economical approach to enable large-scale patterning of 1D-1R architectures while providing excellent NVM performance for future applications.

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高密度纳米柱siox基阻性开关存储器采用纳米球光刻技术制造出一二极管一电阻(1D-1R)结构

一种高度紧凑的一二极管一电阻(1D-1R)纳米柱器件结构已经被证明使用纳米球光刻(NSL)来制造基于siox的电阻开关(RS)存储器。本构siox基阻性开关元件和si基PN二极管在外延硅片上采用NSL和深硅刻蚀工艺自对准，而无需采用传统的光刻工艺。直流电学性能、50 ns的交流脉冲响应、多比特操作能力和高读出裕度抗隐路径问题显示了高速非易失性存储器(NVM)的良好潜力。NSL制造工艺是一种高效，经济的方法，可以实现1D-1R架构的大规模模式，同时为未来的应用提供出色的NVM性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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