Yuanching Lien, E. Klumperink, B. Tenbroek, J. Strange, B. Nauta
{"title":"A mixer-first receiver with enhanced selectivity by capacitive positive feedback achieving +39dBm IIP3 and <3dB noise figure for SAW-less LTE Radio","authors":"Yuanching Lien, E. Klumperink, B. Tenbroek, J. Strange, B. Nauta","doi":"10.1109/RFIC.2017.7969072","DOIUrl":null,"url":null,"abstract":"A mixer-first receiver enhanced with capacitive positive feedback is proposed to obtain a steeper filter roll-off and enhanced linearity, while keeping low noise figure. It covers all sub-6GHz cellular bands and achieves a high IIP3 of +39dBm and blocker 1dB gain compression point of +12dBm for a blocker frequency-offset of 80MHz at fLO=2GHz. The NF ranges from 2.4dB at fLO=1GHz to 5.4dB at fLO=6GHz. The chip has been fabricated in Globalfoundries 45nm SOI technology on a high resistivity substrate.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
A mixer-first receiver enhanced with capacitive positive feedback is proposed to obtain a steeper filter roll-off and enhanced linearity, while keeping low noise figure. It covers all sub-6GHz cellular bands and achieves a high IIP3 of +39dBm and blocker 1dB gain compression point of +12dBm for a blocker frequency-offset of 80MHz at fLO=2GHz. The NF ranges from 2.4dB at fLO=1GHz to 5.4dB at fLO=6GHz. The chip has been fabricated in Globalfoundries 45nm SOI technology on a high resistivity substrate.