M. Montaseri, R. Vuohtoniemi, J. Aikio, T. Rahkonen, A. Pärssinen
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引用次数: 2
Abstract
This paper concerns with the design of multi-stacked CMOS millimeter-wave power amplifiers suitable for phased array front-end applications using triple-well process. The parasitics posed by the triple-well technique are studied and compensated using negative capacitance technique for proper operation. The design technique is evaluated using TSMC 28nm CMOS process at 28GHz operating frequency as a candidate operating band for 5G systems. The results illustrate a power gain of 25dB, 22dBm saturated power, and a maximum 38% PAE along with superior phase alignment between stacks.