Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure

Abstract

The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm²/mg, 10.1 MeV.cm²/mg, 18.8 MeV.cm²/mg, 55.0 MeV.cm²/mg, corresponding to nitrogen ions¹⁵N⁺⁴with energy E = 1.87 MeV, argon⁴⁰Ar⁺¹²with energy E = 372 MeV, ferrum⁵⁶Fe⁺¹⁵ with energy E = 523 MeV, xenon¹³¹Xe⁺³⁵ with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature.