Design of a comparator in CMOS SOI

Erik Säll, M. Vesterbacka
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引用次数: 11

Abstract

This paper gives an introduction to the silicon-on-insulator (SOI) CMOS technology and presents the major advantages and disadvantages of using SOI. It also presents the design of a comparator, which has been sent for manufacturing, designed in a 0.13 /spl mu/m partially depleted SOI CMOS process. The comparator is a first step towards the design of a complete 6-bit flash analog-to-digital converter, with a sampling frequency of 1.5 GHz.
CMOS SOI比较器的设计
本文介绍了绝缘体上硅(SOI) CMOS技术,并介绍了使用SOI的主要优点和缺点。它还介绍了一个比较器的设计,该比较器已被送往制造,设计在0.13 /spl mu/m部分耗尽的SOI CMOS工艺中。比较器是设计完整的6位闪存模数转换器的第一步,采样频率为1.5 GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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