Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa−1 operated under 2 V

Abstract

Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa−1, which is at least 10 times greater than the conventional reports.