Characteristics of SiC Power Diodes at Extreme Temperatures

Abstract

Considering the potential for extreme temperature applications, the temperature-dependent static characteristics and dynamic performance of Silicon carbide (SiC) power diode are carried out over a wide temperature range of 25°C∼425°C in this paper. The static forward characteristics of SiC MOSFET’s body diode (MBD) and SiC Schottky barrier diode (SBD) are measured and analyzed. Then, a high-temperature double pulse test platform is constructed to clarify the relationship between the reverse recovery process and junction temperature, the internal physical mechanism related to temperature of these two kinds of SiC power diode are revealed over a wide temperature range. Experiment results provide guidance for the research and application of SiC MBD and SiC SBD at high temperatures.