Frequency noise of CMOS LC tank oscillators operating in weak inversion

J. Anders, M. Ortmanns
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引用次数: 5

Abstract

In this paper, we present an analytical model for a CMOS LC tank oscillator with its active devices operating in weak inversion. Our model combines nonlinear, stochastic circuit analysis in the form of the so-called stochastic averaging method proposed by Stratonovich with advanced MOS device modeling in the form of the EKV-model. The presented approach not only provides - for the first time - simple, yet accurate closed-form expressions for the oscillation frequency and amplitude of a CMOS LC tank oscillator operating in weak inversion but also allows us to derive closed-form expressions for the phase and frequency noise of the oscillator originating from both the parasitic resistance of the tank coil and the white noise generated in the cross-coupled MOS transistor pair. Thanks to their relatively compact and closed form, the presented results can not only be used for circuit optimization during the initial design phase but also convey important insights into the dependency of phase noise on design parameters such as the transconductance of the active devices.
弱反转时CMOS LC槽振荡器的频率噪声
本文建立了有源器件工作在弱反转状态下的CMOS LC槽振荡器的解析模型。我们的模型结合了Stratonovich提出的所谓随机平均法形式的非线性随机电路分析和ekv模型形式的先进MOS器件建模。所提出的方法不仅首次提供了在弱反转下工作的CMOS LC槽振荡器的振荡频率和振幅的简单而精确的封闭形式表达式,而且还允许我们推导出由槽线圈的寄生电阻和交叉耦合MOS晶体管对产生的白噪声引起的振荡器的相位和频率噪声的封闭形式表达式。由于其相对紧凑和封闭的形式,所提出的结果不仅可以用于初始设计阶段的电路优化,而且还提供了相位噪声对设计参数(如有源器件的跨导)的依赖性的重要见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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