Fully depleted dual-gated thin-film SOI p-MOSFET with an isolated buried polysilicon backgate

Abstract

A p-channel Dual-Gated Thin-Film Silicon-on-insulator (DG-TFSOI) MOSFET has been fabricated with an isolated buried polysilicon backgate and is in a SOI island. This structure allows individual operation of each backgate of each device, rather than the present common backgate (substrate) structure. The ability to use a individual buried gate to dynamically shift the threshold voltage of each individual top MOSFET may have significant implications for low power circuits and offers a way to boost drive currents for faster switching. By using Epitaxial Lateral Overgrowth (ELO) the bottom thermal buried oxide can be specified to any thickness.