Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)

Abstract

We demonstrate a selector device with excellent performances (J_MAX > 10⁷A/cm², switching speed <; 20ns) at the 30nm cell size. Furthermore, these promising device characteristics were achieved in a fully CMOS compatible stack (W/Ta₂O₅/TaO_x/TiO₂/TiN) with extremely thin oxide layer (<; 10nm). Through the comprehensive understanding on the exponential I-V curve, the effect of intrinsic/extrinsic factors such as scaling (area and thickness), and parasitic components were systemically investigated.