Effects of ion barrier film on image noise in generation III image tube

2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI:10.1109/ICOOM.2012.6316335

Q. Duanmu, Ye Li, Shencheng Fu, Guozheng Wang, De Song, Xin Wang, Xulei Qin

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Abstract

In the third-generation image tube, the input surface of microchannel plate (MCP) is typically coated with an ultra-thin dielectric film, called the ion barrier film (IBF), to prevent ions generated in MCP during operation from migrating back to the photocathode and damaging the activation layer of photocathode, and prolong the operation lifetime. But IBF will serves as a scattering center for electron signal and reduce the signal-to-noise (SNR) of the image tube. In this paper, we present overviews of the IBF roles in third-generation image tubes, and the results of Monte-Carlo simulation on electron transmission through the Al2O3 dielectric film with varying electron energy and film thickness. We also calculated and analyzed the noise factors of Al2O3 IBF by Monte-Carlo simulation and the quantum noise model. A method of Temporal Domain Segmentation was proposed for statistical calculation. The results show the noise factor of IBF from quantum noise model is 1.07-1.28 at working voltage of 500-800V, and the one from Monte Carlo Simulation is 1.6-2.6.

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离子阻挡膜对第三代显像管图像噪声的影响

在第三代显像管中，微通道板(MCP)的输入表面通常涂覆一层超薄的介电膜，称为离子阻挡膜(IBF)，以防止MCP在工作过程中产生的离子迁移回光电阴极，破坏光电阴极的激活层，延长工作寿命。但IBF将作为电子信号的散射中心，降低了显像管的信噪比。本文综述了IBF在第三代显像管中的作用，并对电子在不同电子能量和薄膜厚度的Al2O3介电膜中的传输进行了蒙特卡罗模拟。通过蒙特卡罗模拟和量子噪声模型计算并分析了Al2O3 IBF的噪声因子。提出了一种时域分割的统计计算方法。结果表明，在500 ~ 800v工作电压下，量子噪声模型得到的IBF噪声系数为1.07 ~ 1.28，蒙特卡罗仿真得到的IBF噪声系数为1.6 ~ 2.6。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 International Conference on Optoelectronics and Microelectronics

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